Emitter formation using laser doping technique on n- and p-type c-Si substrates

摘要

In\udthis\udwork\udlaser\uddoping\udtechnique\udis\udused\udto\udcreate\udhighly-doped\udregions\uddefined\udin\uda\udpoint-like\udstructure\udto\udform\udn+/p\udand\udp+/n\udjunctions\udapplying\uda\udpulsed\udNd-YAG\ud1064\udnm\udlaser\udin\udthe\udnanosecond\udregime.\udIn\udparticular,\udphosphorous-doped\udsilicon\udcarbide\udstacks\ud(a-SiC\udx\ud/a-Si:H\ud(n-type))\uddeposited\udby\udPlasma\udEnhanced\udChemical\udVapor\udDeposition\ud(PECVD)\udand\udaluminum\udoxide\ud(Al\ud2\udO\ud3\ud)\udlayers\uddeposited\udby\udatomic\udlayer\uddeposition\ud(ALD)\udon\ud2\ud±\ud0.5\ud \udcm\udp-\udand\udn-type\udFZ\udc-Si\udsubstrates\udrespectively\udare\udused\udas\uddopant\udsources.\udLaser\udpower\udand\udnumber\udof\udpulses\udper\udspot\udare\udexplored\udto\udobtain\udthe\udoptimal\udelectrical\udbehavior\udof\udthe\udformed\udjunctions.\udTo\udassess\udthe\udquality\udof\udthe\udp+\udand\udn+\udregions,\udthe\udjunctions\udare\udelectrically\udcontacted\udand\udcharacterized\udby\udmeans\udof\uddark\udJ–V\udmeasurements.\udAdditionally,\uda\uddiluted\udHF\udtreatment\udprevious\udto\udfront\udmetallization\udhas\udbeen\udexplored\udin\udorder\udto\udknow\udits\udimpact\udon\udthe\udjunction\udquality.\udThe\udresults\udshow\udthat\udfine\udtuning\udof\udthe\udenergy\udpulse\udis\udcritical\udwhile\udthe\udnumber\udof\udpulses\udhas\udminor\udeffect.\udIn\udgeneral\udthe\uddifferent\udHF\udtreatments\udhave\udno\udimpact\udin\udthe\uddiode\udelectrical\udbehavior\udexcept\udfor\udan\udincrease\udof\udthe\udleakage\udcurrent\udin\udn+/p\udjunctions.\udThe\udhigh\udelectrical\udquality\udof\udthe\udjunctions\udmakes\udlaser\uddoping,\udusing\uddielectric\udlayers\udas\uddopant\udsource,\udsuitable\udfor\udsolar\udcell\udapplications.\udParticularly,\uda\udpotential\udopen\udcircuit\udvoltage\udof\ud0.64\udV\ud(1\udsun)\udis\udexpected\udfor\uda\udfinished\udsolar\udcell.